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AFIC901N 1 rf device data freescale semiconductor, inc. rf ldmos wideband integrated power amplifier the AFIC901N is a 2--stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. the device is unmatched even at the interstage, allowing performance to be optimized for any frequency in the 1.8 to 1000 mhz range. the high gain, ruggedness and wideband performance of this device make it ideal for use as a pre--driver and driver in a wide range of industrial, medical and communications applications. typical narrowband performance (7.5 vdc, t a =25 ? c, cw) frequency (mhz) g ps (db) ? d (%) p out (dbm) 520 (1) 32.2 73.0 31.2 typical wideband performance (7.5 vdc, t a =25 ? c, cw) frequency (mhz) p in (dbm) g ps (db) ? d (%) p out (dbm) 136?174 (2,5) 0 30.6 62.1 30.6 350?520 (3,5) 3 27.4 61.5 30.4 760?870 (4,5) 3 27.6 57.0 30.6 load mismatch/ruggedness frequency (mhz) signal type vswr pin (w) test voltage result 175 (2) cw > 25:1 at all phase angles 3db overdrive from rated power 9 no device degradation 520 (3) 1. measured in 520 mhz narrowband test circuit. 2. measured in 136?174 mhz vhf broadband reference circuit. 3. measured in 350?520 mhz uhf broadband reference circuit. 4. measured in 760?870 mhz broadband reference circuit. 5. the values shown are the center band performance numbers across the indicated frequency range. features ? characterized for operation from 1.8 to 1000 mhz ? unmatched input, interstage and output allowing wide frequency range utilization ? integrated esd protection ? same pcb layout can be used for 136--174 mhz, 350--520 mhz and 760?870 mhz designs. ? 24--pin, 4 mm qfn plastic package typical applications ? driver for mobile radio power amplifiers ? output stage for low power handheld radios ? driver for communications and industrial systems document number: AFIC901N rev. 0, 1/2016 freescale semiconductor technical data 1.8?1000 mhz, 30 dbm, 7.5 v airfast rf ldmos wideband integrated power amplifier AFIC901N qfn 4 ? 4 figure 1. pin connections note: exposed backside of the package is the source terminal for the transistors. rf in rf out external interstage match figure 2. typical application gnd gnd 24 23 1 2 3 4 5 6 n.c. n.c. n.c. n.c. n.c. n.c. gnd n.c. drain b gnd n.c. gate b gate a n.c. n.c. drain a drain b drain b gate b gate b 22 21 20 19 7 8 9 10 11 12 18 17 16 15 14 13 gate a drain a stage 1 stage 2 stage 2 stage 1 ? freescale semiconductor, inc., 2016. all rights reserved.
2 rf device data freescale semiconductor, inc. AFIC901N table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +30 vdc gate--source voltage v gs ?6.0, +12 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +150 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 78 ? c, 30 dbm cw, 520 mhz stage 1, 7.5 vdc, i dq1 =8ma stage 2, 7.5 vdc, i dq2 =24ma r ? jc 32 9.4 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1a, passes 250 v machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) ii, passes 200 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955.
AFIC901N 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit stage 1 -- off characteristics (1) zero gate voltage drain leakage current (v ds =30vdc,v gs =0vdc) i dss ? ? 1 ? adc drain--source breakdown voltage (v gs =0vdc,i d =1 ? adc) v (br)dss 30 37 ? vdc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 500 nadc stage 1 -- on characteristics (1) gate threshold voltage (v ds =10vdc,i d =6 ? adc) v gs(th) 1.8 2.2 2.6 vdc drain--source on--voltage (v gs =10vdc,i d =46madc) v ds(on) ? 0.24 ? vdc forward transconductance (v ds =7.5vdc,i d =0.1adc) g fs ? 0.096 ? s stage 2 -- off characteristics (1) zero gate voltage drain leakage current (v ds =30vdc,v gs =0vdc) i dss ? ? 1 ? adc drain--source breakdown voltage (v gs =0vdc,i d =1 ? adc) v (br)dss 30 37 ? vdc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 500 nadc stage 2 -- on characteristics (1) gate threshold voltage (v ds =10vdc,i d =25 ? adc) v gs(th) 1.7 2.1 2.5 vdc drain--source on--voltage (v gs =10vdc,i d = 380 madc) v ds(on) ? 0.23 ? vdc forward transconductance (v ds =7.5vdc,i d =1.1adc) g fs ? 1.1 ? s functional tests (in freescale narrowband test fixture, 50 ohm system) v dd =7.5vdc,i dq1 =8ma,i dq2 =24ma, p in =?1dbm,f=520mhz output power p out ? 31.2 ? dbm power gain g ps ? 32.2 ? db drain efficiency ? d ? 73.0 ? % table 6. ordering information device tape and reel information package AFIC901Nt1 t1 suffix = 1,000 units, 12 mm tape width, 7--inch reel qfn 4 ? 4 1. each side of device measured separately.
4 rf device data freescale semiconductor, inc. AFIC901N 136?174 mhz vhf bro adband reference circuit table 7. 136?174 mhz vhf broadband performance (in freescale reference circuit, 50 ohm system) v dd =7.5vdc,i dq1 =10ma,i dq2 =30ma frequency (mhz) p in (dbm) g ps (db) ? d (%) p out (dbm) 135 ?0.8 30.8 65.9 30.0 155 ?1.3 31.3 59.6 30.0 175 ?1.1 31.1 61.4 30.0 table 8. load mismatch/ruggedness (in freescale 136?174 mhz reference circuit, 50 ohm system) i dq1 =10ma,i dq2 =30ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 175 cw > 25:1 at all phase angles 3 db overdrive from rated power 9 no device degradation
AFIC901N 5 rf device data freescale semiconductor, inc. 136?174 mhz vhf broadband refe rence circuit ? 0.83 ?? 1.86 ? (2.11 cm ? 4.72 cm) figure 3. AFIC901N vhf broadband refere nce circuit compone nt layout ? 136?174 mhz c1 l1 c2 c3 c6 r4 r5 l4 l3 c11 c12 c13 c14 c16 r10 r8 c17 r7 l2 r2 c4 c9 c10 c8 r6 l6 l5 c5 p1 p2 c15 j1 q1 b1 d75372 r9 r1 r3 c7 rev. 0 v g1 v g2 table 9. AFIC901N vhf broadband reference circuit co mponent designations and values ? 136?174 mhz part description part number manufacturer b1 rf bead 2508051107y0 fair-rite c1, c5, c9, c12, c14, c17 1000 pf chip capacitors c2012x7r2e102m085aa tdk c2, c16 15 pf chip capacitors gqm2195c2e150fb12d murata c3 1 ? f chip capacitor grm21br71h105ka12l murata c4, c6, c7, c8, c11, c13 100 pf chip capacitors gqm2195c2e101gb12d murata c10 6.2 pf chip capacitor gqm2195c2e6r2bb12d murata c15 10 ? f chip capacitor grm31cr61h106ka12l murata j1 right-angle breakaway headers (3 pins) 22-28-8360 molex l1, l4 56 nh inductors ll1608-fsl56nj toko l2 180 nh inductor ll1608-fslr18j toko l3 120 nh inductor ll1608-fslr12j toko l5 180 nh inductor 1008cs-181xjlb coilcraft l6 15.7 nh inductor 0806sq15n coilcraft p1, p2 5.0 k ? multi-turn cermet trimmer potentiometer 3224w-1-502e bourns q1 rf power ldmos amplifier AFIC901Nt1 freescale r1, r7 15 k ? , 1/10 w chip resistors rr1220p-153-b-t5 susumu r2, r8 10 k ? , 1/8 w chip resistors crcw080510k0fkea vishay r3 200 ? , 1/8 w chip resistor crcw0805200rjnea vishay r4, r6 1.2 k ? , 1/8 w chip resistors crcw08051k20fkea vishay r5 510 ? , 1/10 w chip resistor rr1220p-511-b-t5 susumu r9, r10 0 ? , 2.5 a chip resistors cwcr08050000z0ea vishay pcb fr4 (s--1000), 0.020 ? , ? r =4.8 d75372 mtl
6 rf device data freescale semiconductor, inc. AFIC901N typical characteristics ? 136?174 mh z vhf broadband reference circuit g ps , power gain (db) 175 135 g ps frequency (mhz) figure 4. power gain, drain efficiency and output power versus frequency at a constant input power 160 155 150 145 140 28 ? d 33 32 27 34 31 30 165 170 32 28 29 26 30 31 29 60 80 70 50 40 35 ? d , drain efficiency (%) p out ,output power (dbm) p out v dd =7.5v,p in =0dbm,i dq1 =10ma,i dq2 =30ma 2 1.5 pout, output power (watts) 1.5 v gs2 , gate--source voltage (volts) figure 5. output power versus gate--source voltage, 2nd stage 4.0 3.5 3.0 2.5 2.0 0.5 2.5 1 0 v dd =7.5v,i dq1 =10ma,f=155mhz p in =0dbm p in =?3dbm 1.5 v gs2 , gate--source voltage (volts) detail a 2.5 2.0 0.25 0.5 0 v dd =7.5v,i dq1 =10ma,f=155mhz pout, output power (watts) detail a p in =?3dbm p in =0dbm ? d p in , input power (dbm) g ps , power gain (db) 26 36 ?8 20 50 ?6 33 31 30 20 32 30 32 29 27 ?4 35 40 ?2 4 34 30 28 02 28 26 24 22 ? d , drain efficiency (%) p out ,output power (dbm) v dd =7.5vdc,l dq1 =10ma,l dq2 =30ma figure 6. power gain, drain efficiency and output power versus input power and frequency 23 25 24 60 70 80 g ps p out 175 mhz 135 mhz 155 mhz 175 mhz 135 mhz 175 mhz 135 mhz 155 mhz 155 mhz
AFIC901N 7 rf device data freescale semiconductor, inc. 136?174 mhz vhf bro adband reference circuit z source z interstage_in z load z o =75 ? f = 135 mhz f = 175 mhz f = 135 mhz f = 175 mhz z interstage_out f = 135 mhz f = 175 mhz f = 135 mhz f = 175 mhz f mhz z source1 ? z load1 ? z source2 ? z load2 ? 135 129.8 + j62.2 93.0 + j49.5 27.8 + j35.9 34.3 + j2.85 140 123.1 + j54.4 92.5 + j42.5 29.4 + j35.1 33.4 + j1.92 145 117.3 + j49.7 91.6 + j37.2 30.7 + j34.1 32.5 + j1.00 150 112.5 + j47.8 91.0 + j33.3 31.8 + j33.1 31.7 + j0.08 155 109.1 + j47.7 90.9 + j30.7 32.7 + j32.2 30.9 ? j0.83 160 107.1 + j49.6 91.9 + j29.2 33.2 + j31.4 30.0 ? j1.66 165 106.3 + j53.5 93.9 + j28.6 33.6 + j31.0 29.1 ? j2.41 170 106.8 + j59.2 97.4 + j28.7 33.9 + j30.9 28.2 ? j3.03 175 108.3 + j67.5 102.6 + j29.4 34.1 + j31.1 27.4 ? j3.49 z source = test circuit impedance as measured from gate to gate. z load = test circuit impedance as measured from drain to drain. figure 7. vhf broadband series equivalent source and load impedance ? 136--174 mhz input matching network stage 1 interstage matching network z source1 50 ? 50 ? stage 2 output matching network z load1 z source2 z load2
8 rf device data freescale semiconductor, inc. AFIC901N 350?520 mhz uhf bro adband reference circuit table 10. 350?520 mhz uhf broadband performance (in freescale reference circuit, 50 ohm system) v dd =7.5vdc,i dq1 =10ma,i dq2 =30ma frequency (mhz) p in (dbm) g ps (db) ? d (%) p out (dbm) 350 2.3 27.7 52.8 30.0 435 2.1 27.9 59.6 30.0 520 2.4 27.6 66.3 30.0 table 11. load mismatch/ruggedness (in freescale 350?520 mhz reference circuit, 50 ohm system) i dq1 = 100 ma, i dq2 =30ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 520 cw > 25:1 at all phase angles 3 db overdrive from rated power 9 no device degradation
AFIC901N 9 rf device data freescale semiconductor, inc. 350?520 mhz uhf broadband refe rence circuit ? 0.83 ?? 1.86 ? (2.11 cm ? 4.72 cm) figure 8. AFIC901N uhf broadba nd reference circuit co mponent layout ? 350?520 mhz r10 b1 d75372 q1 j1 p2 p1 c6 l6 c2 r1 l7 r7 c11 c10 c5 r3 c8 r4 l3 r8 c18 r9 r11 c17 c15 c14 c13 c12 l4 l5 r6 r5 c7 c4 l1 c3 l2 c1 r2 c9 c16 rev. 0 v g1 v g2 table 12. AFIC901N uhf broadband re ference circuit co mponent designations and values ? 350?520 mhz part description part number manufacturer b1 rf bead 2508051107y0 fair-rite c1, c5, c7, c9, c10, c12, c14, c18 100 pf chip capacitors gqm2195c2e101gb12d murata c2 10 pf chip capacitor gqm2195c2e100fb12d murata c3 12 pf chip capacitor gqm2195c2e120fb12d murata c4 1 ? f chip capacitor grm21br71h105ka12l murata c6, c13, c15 1000 pf chip capacitors c2012x7r2e102m085aa tdk c8 39 pf chip capacitor gqm2195c2e390gb12d murata c11 4.7 pf chip capacitor gqm2195c2e4r7bb12d murata c16 10 ? f chip capacitor grm31cr61h106ka12l murata c17 6.8 pf chip capacitor gqm2195c2e6r8bb12d murata j1 right-angle breakaway headers (3 pins) 22-28-8360 molex l1, l4 120 nh inductors ll1608-fslr12j toko l2 12 nh inductor ll1608-fsl12nj toko l3 39 nh inductor ll1608-fsl39nj toko l5 15 nh inductor ll1608-fsl15nj toko l6 25 nh inductor 0908sq25n coilcraft l7 8.1 nh inductor 0908sq8n1 coilcraft p1, p2 5.0 k ? multi-turn cermet trimmer potentiometer 3224w-1-502e bourns q1 rf power ldmos amplifier AFIC901Nt1 freescale r1 51 ? , 1/4 w chip resistor sg73p2attd51r0f koa speer r2, r8 15 k ? , 1/10 w chip resistors rr1220p-153-b-t5 susumu r3, r9 10 k ? , 1/8 w chip resistors crcw080510k0fkea vishay r4 200 ? , 1/8 w chip resistor crcw0805200rjnea vishay r5, r7 1.2 k ? , 1/8 w chip resistors crcw08051k20fkea vishay r6 2.2 k ? , 1/8 w chip resistor crcw08052k20jnea vishay r10, r11 0 ? , 2.5 a chip resistors cwcr08050000z0ea vishay pcb fr4 (s--1000), 0.020 ? , ? r =4.8 d75372 mtl
10 rf device data freescale semiconductor, inc. AFIC901N typical characteristics ? 350?520 mh z uhf broadband reference circuit 1.5 v gs2 , gate--source voltage (volts) detail a 2.5 2.0 0.25 0.5 0 p in =3dbm v dd =7.5v,i dq1 =10ma,f=435mhz 1.0 pout, output power (watts) 2 1.5 p out , output power (watts) 1.5 v gs2 , gate--source voltage (volts) figure 9. output power versus gate--source voltage, 2nd stage 4.0 3.5 3.0 2.5 2.0 0.5 2.5 1 0 v dd =7.5v,i dq1 =10ma,f=435mhz p in =0dbm p in =3dbm p in =0dbm detail a frequency (mhz) g ps , power gain (db) 23 340 29 30 28 70 60 50 40 29 26 24 32 80 31 27 25 33 32 31 30 ? d , drain efficiency (%) p out ,output power (dbm) figure 10. power gain, drain efficiency and output power versus frequency at a constant input power ? d g ps p out v dd =7.5v,p in =3.0dbm,l dq1 =10ma,l dq2 =30ma 360 380 400 420 440 460 480 500 520 540 ? d p in , input power (dbm) g ps , power gain (db) 24 34 -- 8 18 30 ?6 31 29 10 32 30 28 30 27 25 ?4 33 20 ?2 4 32 28 26 02 26 24 22 20 ? d , drain efficiency (%) p out ,output power (dbm) v dd =7.5vdc,l dq1 =10ma,l dq2 =30ma figure 11. power gain, drain efficiency and output power versus input power and frequency 21 23 22 40 50 60 g ps p out 36 35 68 70 80 520 mhz 435 mhz 350 mhz 520 mhz 435 mhz 350 mhz 520 mhz 350 mhz 435 mhz
AFIC901N 11 rf device data freescale semiconductor, inc. 350?520 mhz uhf bro adband reference circuit z source z interstage_in z load z o =75 ? z interstage_out f = 350 mhz f = 520 mhz f = 350 mhz f = 520 mhz f = 350 mhz f = 520 mhz f = 350 mhz f = 520 mhz f mhz z source1 ? z load1 ? z source2 ? z load2 ? 350 57.4 + j77.2 60.5 ? j16.5 36.3 + j5.69 22.0 + j6.12 360 60.6 + j94.9 62.7 ? j20.6 37.2 + j6.57 21.7 + j6.35 370 69.0 + j100.2 65.1 ? j24.8 38.3 + j8.07 21.5 + j6.92 380 79.2 + j105.3 66.5 ? j29.4 39.4 + j9.66 21.2 + j7.57 390 91.5 + j109.9 65.1 ? j30.7 39.2 + j11.6 20.3 + j8.45 400 106.3 + j113.5 65.3 ? j28.6 38.6 + j14.6 19.4 + j9.81 410 124.0 + j115.1 65.3 ? j26.2 38.0 + j17.3 18.6 + j11.0 420 144.6 + j113.6 64.3 ? j23.4 37.3 + j19.2 17.8 + j11.9 430 167.9 + j107.3 62.6 ? j21.0 36.7 + j20.1 17.2 + j12.5 440 192.4 + j94.1 60.6 ? j19.3 36.7 + j20.3 16.9 + j12.7 450 196.1 + j89.7 58.9 ? j18.6 36.8 + j20.4 16.7 + j12.6 460 197.5 + j86.7 57.6 ? j19.1 36.8 + j20.5 16.6 + j12.2 470 198.8 + j83.7 56.8 ? j20.8 36.8 + j20.6 16.5 + j11.7 480 199.9 + j80.6 56.3 ? j23.7 36.8 + j20.7 16.3 + j11.3 490 201.0 + j77.5 55.8 ? j27.6 36.9 + j20.8 15.9 + j11.1 500 202.0 + j74.3 54.9 ? j32.3 36.9 + j20.9 15.5 + j11.2 510 202.8 + j71.2 53.4 ? j36.9 36.9 + j21.0 15.0 + j11.7 520 206.6 + j70.1 51.5 ? j40.8 37.7 + j23.5 14.6 + j12.5 z source = test circuit impedance as measured from gate to gate. z load = test circuit impedance as measured from drain to drain. figure 12. uhf broadband series equivalent source and load impedance ? 350--520 mhz input matching network stage 1 interstage matching network z source1 50 ? 50 ? stage 2 output matching network z load1 z source2 z load2
12 rf device data freescale semiconductor, inc. AFIC901N 520 mhz narrowband test fixture table 13. 520 mhz narrowband performance v dd =7.5vdc,i dq1 =8ma,i dq2 =24ma,p in =?1dbm,f=520mhz characteristic symbol min typ max unit output power p out ? 32.2 ? dbm power gain g ps ? 31.2 ? db drain efficiency ? d ? 73.0 ? %
AFIC901N 13 rf device data freescale semiconductor, inc. 520 mhz narrowband test fixture ? 3 ?? 5 ? (7.6 cm ? 12.7 cm) figure 13. AFIC901N narrowband test ci rcuit component layout ? 520 mhz AFIC901N c4 l1 c1 l2 r1 r3 c2 c3 c5 c6 l7 l8 r2 l3 l4 c7 c10 c8 c11 l5 c9 c15 c16 c17 c12 c13 c14 c18 c19 c20 c21 c22 c23 r4 d67108 rev. 0 table 14. AFIC901N narrowband test circuit c omponent designations and values ? 520 mhz part description part number manufacturer c1 8.2 pf chip capacitor atc600f8r2bt250xt atc c2 240 pf chip capacitor atc600f241jt250xt atc c3 39 pf chip capacitor atc600f390jt250xt atc c4 15 pf chip capacitor atc600f150jt250xt atc c5 4.7 pf chip capacitor atc600f4r7bt250xt atc c6 12 pf chip capacitor atc600f120jt250xt atc c7, c8, c9, c10, c11 240 pf chip capacitors atc600f241jt250xt atc c12, c15 22 ? f, 35 v tantalum capacitors t491x226k035at kemet c13, c16, c19, c22 0.1 ? f chip capacitors c0805c104k1ractu kemet c14, c17, c18, c21 0.01 ? f chip capacitors c0805c103k5ractu kemet c20, c23 330 ? f, 35 v electrolytic capacitors mcgpr35v337m10x16-rh multicomp l1, l7, l8 5.5 nh inductors 0806sq5n5 coilcraft l2 12.3 nh inductor 0806sq12n coilcraft l3, l4 22 nh inductors 0807sq22n coilcraft l5 8.9 nh inductor 0806sq8n9 coilcraft r1 8.2 ? , 1/3 w chip resistor rl1220s-8r2-f susumu r2 100 ? , 1/4 w chip resistor crcw1206100rfkea vishay r3 1.0 ? , 1/3 w chip resistor rl1220s-1r0-f susumu r4 75 ? , 1/4 w chip resistor sg73p2attd75r0f koa speer pcb rogers r04350b, 0.030 ? , ? r =3.66 d67108 mtl
14 rf device data freescale semiconductor, inc. AFIC901N typical characteristics ? 520 mhz narrowband test fixture 0 03 1 2.5 2 v gs2? , gate--source voltage (volts) figure 14. output power versus gate--source voltage, 2nd stage p out , output power (watts) 245 p in =0dbm 1 0.5 1.5 p in =?3dbm ? d 30 g ps , power gain (db) 5 -- 1 3 g ps p in , input power (dbm) figure 15. power gain, drain efficiency and output power versus input power -- 3 -- 5 -- 7 ?9 -- 11 15 ? d , drain efficiency (%) 33 32 27 25 34 31 13 35 p out output power (dbm) 28 29 26 25 30 20 p out 50 90 70 30 10 v dd =7.5vdc,i dq1 =8ma,i dq2 =24ma,f=520mhz -- 1 7 v dd =7.5vdc,f=520mhz,v gs1 =3vdc f mhz z source1 ? z load1 ? z source2 ? z load2 ? 520 50.3 + j30.9 84.4 + j93.6 3.5 + j17.8 12.3 + j11.4 z source = test circuit impedance as measured from gate to gate. z load = test circuit impedance as measured from drain to drain. figure 16. narrowband series equivalent source and load impedance ? 520 mhz input matching network stage 1 interstage matching network z source1 50 ? 50 ? stage 2 output matching network z load1 z source2 z load2
AFIC901N 15 rf device data freescale semiconductor, inc. 2.6 ? 2.6 solder pad with thermal via structure. all dimensions in mm. figure 17. pcb pad layout for 24--lead qfn 4 ? 4 0.50 0.30 3.00 4.40 figure 18. product marking a901 wlyw
16 rf device data freescale semiconductor, inc. AFIC901N package dimensions
AFIC901N 17 rf device data freescale semiconductor, inc.
18 rf device data freescale semiconductor, inc. AFIC901N
AFIC901N 19 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers software ? .s2p file ? electromigration mttf calculator ? rf high power model development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 jan. 2016 ? initial release of data sheet
20 rf device data freescale semiconductor, inc. AFIC901N information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2016 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFIC901N rev. 0, 1/2016

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